technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com dual ultrafast power rectifier qualified per mil-prf-19500/643 t4-lds-0019 rev. 1 (072045) page 1 of 1 devices levels 1n6766 1n6766r jan 1n6767 1n6767r jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) (per diode) parameters / test conditions symbol value unit peak repetitive reverse voltage 1n6766, r 1n6767, r v rwm 400 600 vdc average forward current (1) t c = +100c i f 12 adc peak surge forward current i fsm 125 a(pk) thermal resistance - junction to case r jc 1.8 c/w note: (1) derate @ 240ma/c above t c = 100c electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit breakdown voltage (2) i r = 10adc 1n6766 1n6767 v br 400 600 vdc forward voltage (2) i f = 6adc i f = 12adc v f1 v f2 1.35 1.55 vdc reverse leakage current v r = 320v v r = 480v 1n6766 1n6767 i r1 10 adc reverse leakage current v r = 320v, t c = +100c v r = 480v, t c = +100c 1n6766 1n6767 i r2 1.0 madc reverse recovery time i f = 1.0a, di/dt = 50a/s t rr 60 ns junction capacitance v r = 5vdc, f = 1.0mhz c j 300 pf note: (2) pulse test; 300s, duty cycle 2% to-254 ? 1 ? 2 ? 3 1n6766, 1n6767 ? 1 ? 2 ? 3 1n6766r, 1n6767r downloaded from: http:///
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